September 30, 2007

Chantilly, Virginia - LT Technologies and Rensselaer Polytechnic Institute jointly received a NSF SBIR Phase IIR Grant of $200,000. The grant was awarded to fund research work related to the fabrication of high-performance SiC p-i-n diode and n-MOSFET devices based on microwave-based RTP techniques. This grant represents a significant opportunity to advance the use of microwave-based RTP technology in the fabrication process of wide-bandgap semiconductors.

July 24, 2007

Herndon, Virginia - CIT GAP Funds Invests in LT Technologies

The Center for Innovative Technology (CIT) today announced that CIT GAP Funds is investing $100,000 in LT Technologies, LLC (LTT) to advance next generation semiconductor technologies. LT Technologies of Chantilly will use the investment to finance further research and development, commercialization and marketing of its break-through microwave technology and products in the semiconductor rapid thermal processing and bonding markets.

                                                           March 3, 2007

Fairfax, Virginia - LT Technologies, LLC. (LTT) has received a Small Business Innovative Research (SBIR) Phase II contract from the National Science Foundation. The Phase II funding of approximately $500,000 will help fund the continued development of LTT's state-of-the-art solid-state microwave technology for short-duration, high-temperature thermal annealing  of compound semiconductors.