• Journal of Electronic Materials, Issue: 36, Volume: 3, "Comparison of solid-state microwave annealing with furnace annealing of ion-implanted silicon carbide", S.G. Sundaresan, Y-L. Tian, J.A. Schreifels, M.C. Wood, K.A. Jones, A.V. Davydov, and M.V. Rao
   

• Solid-State Electronics, 2007, "Ultra-low resistivity Al+-implanted SiC obtained by microwave annealing and a protective graphite cap", S.G. Sundaresan, Y-L. Tian, J.A. Schreifels, N.A. Mahadik, S.B. Qadri, E. Gomar-Nadal, E.D. Williams, J. Zhang, and M.V. Rao
   

• Journal of Applied Physics, Issue: 101, Volume: 7, "Ultra-high temperature annealing of Al + and P+ - implanted silicon carbide", S.G. Sundaresan, Y-L. Tian, M.C. Ridgway, J.A. Schreifels, J.J. Kopanski, and M.V. Rao
   

• Nuclear Instruments and Methods in Physics Research B, April 2007 issue, "Ultra-high temperature annealing of Al + and P+ - implanted silicon carbide", S.G. Sundaresan, Y-L. Tian, M.C. Ridgway, J.A. Schreifels, J.J. Kopanski, and M.V. Rao
   

• "A study of AlN and MgO caps for protecting the GaN surface during ultra-fast microwave annealing", S.G. Sundaresan, A.V. Davydov, Y-L. Tian, M.V. Rao et al., to be presented at the 49 th Electronic Materials Conference, to be held at the University of Notre Dame, IN, USA, June 20-22, 2007.
   

• "A novel microwave based technique for controllable growth of SiC nanowires", S.G. Sundaresan, A.V. Davydov, Y-L. Tian, M.D. Vaudin, I. Levin, J. Maslar, and M.V. Rao, to be presented at the Nanotechnology Conference and Trade Show (NSTI) 2007, to be held in Santa Clara, CA, USA, May 20-24, 2007.
   

• "Solid-state microwave annealing of ion-implanted SiC", S.G. Sundaresan, Y-L. Tian, M.C. Ridgway, and M.V. Rao, 16 th International Conference on "Ion-beam modification of materials (IBMM)" held in Taormina, Italy, September 18-22, 2006.