• Invited article: "Microwave technology for rapid thermal processing reaches ultrahigh temperatures" MRS Bulletin, vol. 35, p181, March , 2010
   

• Mulpuri Rao, Y-L. Tian, S.B. Qadri, J.A. Freitas, Jr., R. Nipoti, "Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors ", Materials Science Forum vol. 645-648, p709-712, 2010 (ICSCRM 2009)
   

• N. Mahadik, Syed B Qadri, Siddarth G Sundaresan, Mulpuri V Rao, Yonglai Tian, Qingchun Zhang,"Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layer ", Surface and Coatings Technology vol 203, issue: 17, p2625-2628, 2009
   

• S.G. Sundaresan, Y-L. Tian, J.A. Schreifels, N.A. Mahadik, S.B. Qadri, E. Gomar-Nadal, E.D. Williams, J. Zhang, and M.V. Rao, " Ultra-low resistivity Al+-implanted SiC obtained by microwave annealing and a protective graphite cap ", Solid-State Electronics, vol.52, p140-145, 2008
   

• S.G. Sundaresan, Y-L. Tian, M.C. Ridgway, J.A. Schreifels, J.J. Kopanski, and M.V. Rao, "Ultra-high temperature annealing of Al + and P+ - implanted silicon carbide", Journal of Applied Physics, issue 101, 073708, 2007
   

• S.G. Sundaresan, Y-L. Tian, and M.V. Rao,"Characteristics of Mg doped GaN epilayers subjected to ultra-high temperature microwave annealing using protective caps", Semicond. Sci. Technol. S.G. Sundaresan, A.V. Vol 22, p1151-1156, 2007
   

• S.G. Sundaresan, A.V. Davydov, Mark D. Vaudin, Igor Levin, James Mastar, Y-L. Tian, M.V. Rao "Growth of SiC nanowires by a microwave heating-assistant physical vapor transport process using group VIII metal catalysts", Chem. Mater. Vol. 19, p5531-5537, 2007